- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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417
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | ||
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702
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Trench IGBT Gen3 | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.5 V | 240 A | + / - 250 nA | +/- 20 V | ||
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143
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V 40A FS2 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 1.2 kV | 2 V | 80 A | +/- 400 nA | +/- 30 V |
