Build a global manufacturer and supplier trusted trading platform.
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH30S130P
GET PRICE
RFQ
432
In-stock
Fairchild Semiconductor IGBT Transistors 1300V 30A FS SA Trench IGBT Through Hole TO-3PN + 175 C Tube 500 W Single 1300 V 1.9 V 60 A   25 V
FGH30S150P
GET PRICE
RFQ
397
In-stock
Fairchild Semiconductor IGBT Transistors 1500V 30A FS SA Trench IGBT Through Hole TO-247-3 + 175 C Tube 500 W Single 1.5 kV 2.15 V 60 A +/- 500 nA +/- 25 V
IXYN82N120C3H1
GET PRICE
RFQ
35
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack SMD/SMT SOT-227B-4 + 150 C Tube 500 W Single 1200 V 2.75 V 105 A 100 nA 30 V
IXBT42N300HV
GET PRICE
RFQ
29
In-stock
IXYS IGBT Transistors SMD/SMT TO-268HV-2 + 150 C   500 W Single 3 kV 2.5 V 104 A +/- 200 nA +/- 25 V
APT40GR120B2D30
GET PRICE
RFQ
54
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 Through Hole TO-247-3 + 150 C   500 W Single 1.2 kV 2.5 V 88 A 250 nA 30 V
IXYH40N90C3D1
GET PRICE
RFQ
67
In-stock
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT Through Hole TO-247AD-3 + 150 C Tube 500 W Single 900 V 2.2 V 90 A 100 nA +/- 20 V
APT64GA90LD30
GET PRICE
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
IXYH30N120C3
GET PRICE
RFQ
30
In-stock
IXYS IGBT Transistors 1200V XPT GenX3 IGBT Through Hole TO-247-3 + 150 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
IXYP30N120C3
GET PRICE
RFQ
70
In-stock
IXYS IGBT Transistors GenX3 1200V XPT IGBT Through Hole TO-220-3 + 175 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
Page 1 / 1