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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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19
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 600 V | 1.83 V | 85 A | 100 nA | +/- 20 V | |||
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54
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.52 V | 99 A | 100 nA | +/- 20 V | |||
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47
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.97 V | 78 A | 100 nA | +/- 20 V |