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Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PSC71KDPBF
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19
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Infineon Technologies IGBT Transistors 600V UltraFast 8-25kHz Through Hole TO-274-3 + 150 C Tube 350 W Single 600 V 1.83 V 85 A 100 nA +/- 20 V
IRG4PSH71UDPBF
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54
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Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-274-3 + 150 C Tube 350 W Single 1.2 kV 2.52 V 99 A 100 nA +/- 20 V
IRG4PSH71KDPBF
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RFQ
47
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Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-274-3 + 150 C Tube 350 W Single 1.2 kV 2.97 V 78 A 100 nA +/- 20 V
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