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Maximum Operating Temperature :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGP20N60H3
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421
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Infineon Technologies IGBT Transistors IGBT 600V Through Hole PG-TO-220-3   Tube 170 W   600 V 2.4 V 40 A 100 nA 20 V
IGW20N60H3
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RFQ
228
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Infineon Technologies IGBT Transistors 600V HI SPEED SW IGBT Through Hole PG-TO-247-3   Tube 170 W   600 V 2.4 V 40 A 100 nA 20 V
IKW20N60H3
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RFQ
61
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Infineon Technologies IGBT Transistors 600V 20A 170W Through Hole TO-247-3 + 175 C Tube 170 W Single 600 V 2.5 V 40 A 100 nA 20 V
IKP20N60H3
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RFQ
500
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Infineon Technologies IGBT Transistors 600V HI SPEED SW IGBT Through Hole TO-220-3 FP + 175 C Tube 170 W Single 600 V 1.95 V 40 A 100 nA 20 V
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RFQ
240
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Infineon Technologies IGBT Transistors 600V 20A 170W Through Hole TO-247-3 + 175 C Tube 170 W Single 600 V 2.5 V 40 A 100 nA 20 V
IXGR60N60C3D1
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RFQ
IXYS IGBT Transistors 60 Amps 600V Through Hole ISOPLUS247 + 150 C Tube 170 W Single 600 V 2.5 V 75 A 100 nA 20 V
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