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Maximum Operating Temperature :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW40N120T2
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RFQ
6,820
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A Through Hole TO-247-3 + 175 C Tube 480 W Single 1200 V 2.3 V 75 A 200 nA 20 V
IKW40N120T2FKSA1
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RFQ
5,000
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A Through Hole TO-247-3 + 175 C Tube 480 W Single 1200 V 2.3 V 75 A 200 nA 20 V
IXYH40N120C3D1
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RFQ
63
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT Through Hole TO-247-3 + 150 C Tube 480 W Single 1200 V 4.8 V 64 A 100 nA 30 V
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