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Package / Case :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA25N120ANTD
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RFQ
10,400
In-stock
onsemi IGBT Transistors Copak Discrete Through Hole TO-3P-3 + 150 C Tube 312 W Single 1200 V 2 V 50 A +/- 250 nA +/- 20 V
IHW30N160R2
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RFQ
494
In-stock
Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A Through Hole TO-247-3 + 175 C Tube 312 W Single 1600 V 2.35 V 60 A 100 nA 20 V
IHW30N160R2FKSA1
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RFQ
272
In-stock
Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A Through Hole TO-247-3 + 175 C Tube 312 W Single 1600 V 2.35 V 60 A 100 nA 20 V
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