IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGB30H60DFB	GET PRICE	PDF RFQ	1,401 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A...	SMD/SMT	D2PAK-3	+ 175 C	Reel	260 W	Single	600 V	1.55 V	60 A	+ / - 250 nA	+/- 20 V
STGP30H60DFB	GET PRICE	PDF RFQ	881 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A...	Through Hole	TO-220-3	+ 175 C		260 W	Single	600 V	1.55 V	60 A	+ / - 250 nA	+/- 20 V
STGB30V60F	GET PRICE	PDF RFQ	968 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A ...	SMD/SMT	D2PAK-3	+ 175 C	Reel	260 W	Single	600 V	1.85 V	60 A	+ / - 250 nA	+/- 20 V
STGB30H60DLFB	GET PRICE	PDF RFQ	500 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A...	SMD/SMT	D2PAK-3	+ 175 C	Reel	260 W	Single	600 V	1.55 V	60 A	+ / - 250 nA	+/- 20 V

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