- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
472
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650 V 100 A 240 W | Through Hole | TO-247 | + 175 C | Tube | 240 W | 650 V | 2.1 V | 100 A | 400 nA | 25 V | |||
|
|
VIEW | IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 240 W | Single | 900 V | 2.3 V | 46 A | 100 nA | 30 V |
