IGBT Transistors - Kaimeite

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6 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXDN55N120D1	GET PRICE	PDF RFQ	94 In-stock	IXYS	IGBT Transistors 55 Amps 1200V	SMD/SMT	SOT-227B-4	+ 150 C	Tube		Single Dual Emitter	1200 V	2.3 V			+/- 20 V
IXGN320N60A3	GET PRICE	PDF RFQ	35 In-stock	IXYS	IGBT Transistors 320 Amps 600V	SMD/SMT	SOT-227B-4	+ 150 C	Tube		Single Dual Emitter	600 V				+/- 20 V
IXDN75N120	GET PRICE	PDF RFQ	100 In-stock	IXYS	IGBT Transistors 75 Amps 1200V	SMD/SMT	SOT-227B-4	+ 150 C	Tube		Single Dual Emitter	1200 V	2.2 V			+/- 20 V
IXGE200N60B	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 175 Amps 600V 2.1 Rds	SMD/SMT	ISOPLUS 227-4	+ 150 C	Tube		Single Dual Emitter	600 V				+/- 20 V
IXSN50N60BD3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 75 Amps 600V 2.5 Rds	SMD/SMT	SOT-227B-4	+ 150 C	Tube		Single Dual Emitter	600 V				+/- 20 V
STGE50NC60WD	GET PRICE	PDF RFQ	59 In-stock	STMicroelectronics	IGBT Transistors N-Ch 600volt 50 Amp	Through Hole	ISOTOP-4	+ 150 C	Tube	260 W	Single Dual Emitter	600 V	2.5 V	50 A	100 nA	20 V

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