IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGB20B60PD1PBF		GET PRICE	PDF RFQ	57,400 In-stock	Infineon Technologies	IGBT Transistors 600V Warp2 150kHz	Through Hole	TO-220-3	+ 150 C	Tube	215 W	Single	600 V	2.05 V	40 A	100 nA	+/- 20 V
IRG4BC40W-SPBF	1+ $3.130 10+ $2.660 100+ $2.310 250+ $2.190		PDF RFQ	309 In-stock	Infineon Technologies	IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT	SMD/SMT	D-PAK-3	+ 150 C	Tube	160 W	Single	600 V	2.05 V	40 A	100 nA	+/- 20 V
IRG7PH30K10PBF	1+ $3.900 10+ $3.310 100+ $2.870 250+ $2.720		PDF RFQ	94 In-stock	IR / Infineon	IGBT Transistors Trnch IGBT 1200V 10A single IGBT	Through Hole	TO-247-3	+ 175 C	Tube	210 W	Single	1.2 kV	2.05 V	33 A	100 nA	+/- 30 V

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