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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4266DPBF
1+
$10.630
10+
$9.610
25+
$9.160
50+
$8.530
RFQ
66
In-stock
Infineon Technologies IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AC-3 + 175 C Tube 455 W Single 650 V 1.7 V 140 A 100 nA 20 V
IXYH60N90C3
1+
$6.410
10+
$5.450
100+
$4.720
250+
$4.480
RFQ
56
In-stock
IXYS IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3 Through Hole TO-247-3 + 175 C Tube   Single 900 V 2.7 V 140 A 100 nA +/- 20 V
Default Photo
1+
$6.570
10+
$5.940
25+
$5.670
100+
$4.920
RFQ
240
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 714 W Single 600 V 2.25 V 140 A 100 nA 20 V
IRGP4266D-EPBF
1+
$10.750
10+
$9.720
25+
$9.260
50+
$8.630
RFQ
51
In-stock
IR / Infineon IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AD-3 + 175 C Tube 455 W Single 650 V 1.7 V 140 A 100 nA 20 V
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