IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4PF50WDPBF	1+ $7.650 10+ $6.920 25+ $6.600 100+ $5.730		PDF RFQ	91 In-stock	Infineon Technologies	IGBT Transistors 900V Warp 20-100kHz	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	900 V	2.25 V	51 A	100 nA	+/- 20 V
	IRG4PF50WPBF	1+ $6.080 10+ $5.170 25+ $5.080 100+ $4.480		PDF RFQ	193 In-stock	Infineon Technologies	IGBT Transistors 900V Warp 20-100kHz	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	900 V	2.25 V	51 A	100 nA	+/- 20 V

IRG4PF50WDPBF

IRG4PF50WDPBF

Infineon Technologies

IGBT Transistors 900V Warp 20-100kHz

Stock : 91

1+: $7.650

10+: $6.920

25+: $6.600

100+: $5.730

IRG4PF50WPBF

IRG4PF50WPBF

Infineon Technologies

IGBT Transistors 900V Warp 20-100kHz

Stock : 193

1+: $6.080

10+: $5.170

25+: $5.080

100+: $4.480

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