IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGP6NC60HD	1+ $1.290 10+ $1.100 100+ $0.843 500+ $0.745		PDF RFQ	1,525 In-stock	STMicroelectronics	IGBT Transistors PowerMESH" IGBT	Through Hole	TO-220-3	+ 150 C	Tube	56 W	Single	600 V	1.9 V	15 A	100 nA	20 V
	STGD6NC60H-1	3000+ $0.546 9000+ $0.525	GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	IPAK-3	+ 150 C	Tube	62.5 W	Single	600 V	1.9 V	15 A	100 nA	+/- 20 V
	IRG8P08N120KD-EPBF	1+ $4.670 10+ $3.970 25+ $3.900 100+ $3.440		PDF RFQ	90 In-stock	IR / Infineon	IGBT Transistors 1200V IGBT GEN8	Through Hole	TO-247AD-3	+ 150 C	Tube	89 W	Single	1200 V	1.7 V	15 A	100 nA	30 V
	IRG8P08N120KDPBF	1+ $4.020 10+ $3.410 100+ $2.960 250+ $2.810		PDF RFQ	188 In-stock	IR / Infineon	IGBT Transistors 1200V IGBT GEN8	Through Hole	TO-247AC-3	+ 150 C	Tube	89 W	Single	1200 V	1.7 V	15 A	100 nA	30 V

STGP6NC60HD

STGP6NC60HD

STMicroelectronics

IGBT Transistors PowerMESH" IGBT

Stock : 1,525

1+: $1.290

10+: $1.100

100+: $0.843

500+: $0.745

Default Photo

STGD6NC60H-1

STMicroelectronics

IGBT Transistors IGBT & Power Bipolar

Stock : 0

3000+: $0.546

9000+: $0.525

GET PRICE

IRG8P08N120KD-EPBF

IRG8P08N120KD-EPBF

IR / Infineon

IGBT Transistors 1200V IGBT GEN8

Stock : 90

1+: $4.670

10+: $3.970

25+: $3.900

100+: $3.440

IRG8P08N120KDPBF

IRG8P08N120KDPBF

IR / Infineon

IGBT Transistors 1200V IGBT GEN8

Stock : 188

1+: $4.020

10+: $3.410

100+: $2.960

250+: $2.810

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