- Manufacture :
- Mounting Style :
- Package / Case :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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918
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | DPAK-3 | + 175 C | Reel | 62.5 W | Single | 600 V | 2.75 V | 18 A | 100 nA | 20 V | ||||
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500
In-stock
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | 70 W | Single | 650 V | 1.95 V | 18 A | 100 nA | 20 V | |||||
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500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.95 V | 18 A | 100 nA | 20 V | ||||
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500
In-stock
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.9 V | 18 A | 100 nA | 20 V | ||||
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334
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 70 W | Single | 650 V | 1.9 V | 18 A | 100 nA | 20 V | ||||
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83
In-stock
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IXYS | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 | Through Hole | TO-220-3 | + 175 C | Tube | 50 W | Single | 650 V | 2.27 V | 18 A | 100 nA | 30 V |