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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYB82N120C3H1
1+
$20.600
5+
$20.380
10+
$19.000
25+
$18.150
RFQ
204
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack Through Hole TO-264-3 + 150 C Tube 1040 W Single 1200 V 2.75 V 164 A 100 nA 30 V
IXXK110N65B4H1
1+
$10.980
10+
$10.100
25+
$9.680
100+
$8.530
RFQ
92
In-stock
IXYS IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT Through Hole TO-264-3 + 175 C Tube 880 W Single 650 V 1.75 V 240 A 100 nA 20 V
APT80GA60LD40
1+
$13.490
10+
$12.260
25+
$11.340
50+
$10.720
RFQ
22
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... SMD/SMT TO-264-3 + 150 C Tube 625 W Single 600 V 2 V 143 A 100 nA 30 V
IXYK100N120C3
1+
$18.960
10+
$17.430
25+
$16.710
100+
$14.720
RFQ
20
In-stock
IXYS IGBT Transistors 1200V 188A XPT IGBT Through Hole TO-264-3 + 175 C Tube 1150 W Single 1200 V 2.9 V 188 A 100 nA 30 V
APT64GA90LD30
1+
$12.450
10+
$11.320
25+
$10.470
50+
$9.900
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
IXGK28N140B3H1
1+
$6.900
10+
$6.240
25+
$5.950
100+
$5.170
RFQ
102
In-stock
IXYS IGBT Transistors 28 Amps 1400V Through Hole TO-264-3 + 150 C Tube 300 W Single 1.4 kV 3 V 60 A 100 nA +/- 20 V
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