- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
201
In-stock
|
IXYS | IGBT Transistors 120Amps 600V | Through Hole | PLUS 247-3 | + 150 C | Tube | 780 W | Single | 600 V | 1.5 V | 280 A | 100 nA | +/- 20 V | ||||
|
177
In-stock
|
IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 880 W | Single | 650 V | 1.75 V | 240 A | 100 nA | 20 V | ||||
|
16
In-stock
|
IXYS | IGBT Transistors 32 Amps 1700V 2.5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | ||||
|
13
In-stock
|
IXYS | IGBT Transistors 24 Amps 1700V 5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V |