- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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217
In-stock
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IXYS | IGBT Transistors XPT 600V IGBT 300A | Through Hole | PLUS 247-3 | + 175 C | Tube | 2.3 kW | Single | 600 V | 1.3 V | 550 A | 200 nA | +/- 20 V | |||
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177
In-stock
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 880 W | Single | 650 V | 1.75 V | 240 A | 100 nA | 20 V | |||
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45
In-stock
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IXYS | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.54 V | 310 A | 200 nA | 20 V | |||
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18
In-stock
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IXYS | IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V |
