- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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99
In-stock
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IXYS | IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A | Through Hole | TO-247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V | |||
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19
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 600 V | 1.83 V | 85 A | 100 nA | +/- 20 V | |||
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54
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.52 V | 99 A | 100 nA | +/- 20 V | |||
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16
In-stock
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IXYS | IGBT Transistors 32 Amps 1700V 2.5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | |||
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37
In-stock
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IXYS | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | |||
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47
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.97 V | 78 A | 100 nA | +/- 20 V | |||
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13
In-stock
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IXYS | IGBT Transistors 24 Amps 1700V 5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V |
