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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V |
