- Mounting Style :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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493
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | |||||
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1,608
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH TM IGBT | SMD/SMT | DPAK-3 | + 150 C | Tube | 56 W | Single | 600 V | 1.9 V | 100 nA | +/- 20 V | |||||
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1,525
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 56 W | Single | 600 V | 1.9 V | 15 A | 100 nA | 20 V | ||||
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1,807
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | SMD/SMT | DPAK-3 | + 150 C | Reel | 52 W | Single | 600 V | 1.9 V | 7.8 A | 100 nA | +/- 20 V | ||||
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1,269
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | SMD/SMT | DPAK-3 | + 150 C | Reel | 50 W | Single | 600 V | 1.9 V | 100 nA | +/- 20 V | |||||
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959
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 FP | + 150 C | Tube | 20 W | Single | 600 V | 1.9 V | 100 nA | +/- 20 V | |||||
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63
In-stock
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | ||||
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98
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 543 W | Single | 650 V | 1.9 V | 118 A | 250 nA | 30 V | |||||
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17
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 100 W | Dual | 600 V | 1.9 V | 30 A | 200 nA | +/- 20 V | ||||
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44,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 600 W | 600 V | 1.9 V | 120 A | 400 nA | 20 V | |||||
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45
In-stock
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IXYS | IGBT Transistors XPT IGBT Phaseleg | SMD/SMT | ISOPLUS-9 | + 150 C | Tube | 150 W | Single | 1200 V | 1.9 V | 43 A | 500 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | IPAK-3 | + 150 C | Tube | 62.5 W | Single | 600 V | 1.9 V | 15 A | 100 nA | +/- 20 V | ||||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40A FS1 IGBT IH | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V | ||||
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117
In-stock
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onsemi | IGBT Transistors 1200V/40A FS1 IGBT | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V |