- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,067
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | ||||
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858
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | PowerDI |
