MOSFET - Kaimeite

Applied Filters :

3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	DMN10H120SE-13	1+ $0.570 10+ $0.470 100+ $0.287 1000+ $0.222 2500+ $0.189		PDF RFQ	828 In-stock	Diodes Incorporated	MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC	20 V	SMD/SMT	SOT-223-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	3.6 A	77 mOhms	1.5 V	10 nC	Enhancement
	DMN10H120SFG-13	1+ $0.610 10+ $0.504 100+ $0.325 1000+ $0.260 3000+ $0.220		PDF RFQ	3,000 In-stock	Diodes Incorporated	MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF	20 V	SMD/SMT	PowerDI3333-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	3.8 A	68 mOhms	1.5 V	10.6 nC	Enhancement
	DMN10H099SFG-7	1+ $0.620 10+ $0.512 100+ $0.330 1000+ $0.264 2000+ $0.223		PDF RFQ	1,710 In-stock	Diodes Incorporated	MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC	20 V	SMD/SMT	PowerDI3333-8		+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	4.2 A	54 mOhms	1.5 V	25.2 nC	Enhancement	PowerDI

DMN10H120SE-13

DMN10H120SE-13

Diodes Incorporated

MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC

Stock : 828

1+: $0.570

10+: $0.470

100+: $0.287

1000+: $0.222

2500+: $0.189

DMN10H120SFG-13

DMN10H120SFG-13

Diodes Incorporated

MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF

Stock : 3,000

1+: $0.610

10+: $0.504

100+: $0.325

1000+: $0.260

3000+: $0.220

DMN10H099SFG-7

DMN10H099SFG-7

Diodes Incorporated

MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC

Stock : 1,710

1+: $0.620

10+: $0.512

100+: $0.330

1000+: $0.264

2000+: $0.223

Page 1 / 1