- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | |||
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1,243
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 2.5 V | 8.3 nC | Enhancement | |||
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1,804
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | 16 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.24 A | 250 mOhms | 1 V | 8.3 nC | Enhancement | |||
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415
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.3 A | 220 mOhms | 1.7 V | 8.3 nC | Enhancement |
