- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,767
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 5.4 A | 27 mOhms | 6.3 nC | ||||||
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5,475
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.8 A | 45 mOhms | 1.3 V | 37.56 nC | Enhancement | ||||
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3,650
In-stock
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Diodes Incorporated | MOSFET 40V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7 A | 75 mOhms | Enhancement | ||||||
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5,255
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | ||||
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3,134
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 5.4 A | 34 mOhms | 4.9 nC | ||||||
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3,500
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 13.7 A | 21 mOhms | 1 V | 12.9 nC | Enhancement | ||||
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4,068
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 31 mOhms | 18.6 nC | Enhancement | |||||
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2,237
In-stock
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Diodes Incorporated | MOSFET 40V 10.9A N-CHANNEL MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.9 A | 50 mOhms | Enhancement | ||||||
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1,638
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 4.8 A | 34 mOhms | 4.9 nC | ||||||
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1,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.9 A | 3.7 mOhms | 2 V | 49.1 nC | Enhancement | ||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 7.6 mOhms | 2 V | 41.9 nC | Enhancement | ||||
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1,286
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 20 mOhms | 3 V | 19.1 nC | Enhancement | ||||
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2,045
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V 1.3W 1180pF 21.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.9 A, 4.5 A | 32 mOhms, 55 mOhms | - 2.2 V, 2.4 V | 19.1 nC, 21.5 nC | Enhancement | ||||
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2,163
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 28 A | 20 mOhms | 1 V | 9.6 nC | Enhancement | ||||
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1,635
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 6 A | 20 mOhms | 1.8 V | 18.6 nC | Enhancement | ||||
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1,474
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.2 A | 26 mOhms | 1 V | 9.2 nC | Enhancement | ||||
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814
In-stock
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Diodes Incorporated | MOSFET 40V N/P-Channel Enhancement MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.2 A | 50 mOhms | Enhancement | ||||||
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779
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement | ||||
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406
In-stock
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | ||||
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7,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5 mOhms | 1 V | 29.1 nC | Enhancement | ||||
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3,596
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||
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7,500
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode AEC-Q101 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 6 mOhms | 2 V | 51 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 1810pF 37nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 15 mOhms | 37 nC | Enhancement | PowerDI | |||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | SMD/SMT | SO-8 | Reel | Si | N-Channel | 40 V | |||||||||||||
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9,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement |
