- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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9,500
In-stock
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Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 260 mA | 4 Ohms | 700 mV | 360 pC | Enhancement | ||||
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5,720
In-stock
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Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | ||||
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130,000
In-stock
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Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | PowerDI | |||
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57,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS | SMD/SMT | X1-DFN1006-3 | Reel | 2 Channel | Si | N-Channel | 25 V | 1.3 A | 600 mOhms |
