- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,434
In-stock
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Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | |||
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4,623
In-stock
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Diodes Incorporated | MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF | 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6.6 A | 25 mOhms | Enhancement | |||||
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3,515
In-stock
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Diodes Incorporated | MOSFET 40V P-CH MOSFET | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 8 A | 25 mOhms | - 1.3 V | 33.7 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | |||
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1,560
In-stock
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Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 7.7 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | ||||
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1,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | |||
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2,153
In-stock
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Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.7 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | |||
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4,042
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | |||
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5,099
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.2 A | 25 mOhms | 400 mV | 4.8 nC | Enhancement | |||
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2,900
In-stock
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Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.9 A | 25 mOhms | 2.1 V | 13 nC | Enhancement | |||
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9,955
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | |||
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2,340
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 14.4 nC | Enhancement | |||
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1,785
In-stock
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Diodes Incorporated | MOSFET N-Ch -20V VDSS Enchanced Mosfet | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 25 mOhms | Enhancement | |||||
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985
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.2 A | 25 mOhms | 800 mV | 18.4 nC | Enhancement | |||
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949
In-stock
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Diodes Incorporated | MOSFET N-Ch 20V VDSS 8 Vgss 30A IDM | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 25 mOhms | Enhancement | |||||
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199
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.9 A | 25 mOhms | Enhancement | |||||
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32,518
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 25 mOhms | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | |||
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5,819
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K | 12 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.2 A | 25 mOhms | - 1.2 V | 113 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | SMD/SMT | PowerDI3333-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | |||||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 25 nC | Enhancement | |||
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465,000
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 7.2 A | 25 mOhms | - 1.8 V | 14 nC | Enhancement |
