- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
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- Qg - Gate Charge :
-
- 0.35 nC (1)
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- 48.7 nC (1)
- 5 nC (1)
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- 622.4 pC (1)
- 72 nC (1)
- 800 pC (1)
- 9 nC (2)
- 9.1 nC (1)
- 9.6 nC (1)
- Applied Filters :
47 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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30,227
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | ||||
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2,937
In-stock
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Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | ||||
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4,094
In-stock
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Diodes Incorporated | MOSFET 70V P-Channel 5.7A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 5.7 A | 160 mOhms | - 1 V | 9.6 nC | Enhancement | ||||
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1,602
In-stock
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Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | ||||
|
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2,889
In-stock
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Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | ||||
|
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3,578
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | ||||
|
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2,459
In-stock
|
Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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19,640
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | ||||
|
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3,000
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.2 A | 9.5 mOhms | - 1 V | 42.7 nC | Enhancement | ||||
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6,775
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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12,549
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
|
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870
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | ||||
|
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895
In-stock
|
Diodes Incorporated | MOSFET 40V P-Ch Enh FET 45mOhm -10V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 40 mOhms | - 1 V | 23.2 nC | Enhancement | ||||
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GET PRICE |
7,410
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 20 mOhms | - 1 V | 22 nC | Enhancement | |||
|
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1,449
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.5 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | ||||
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1,309
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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4,216
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | - 1 V | 622.4 pC | Enhancement | ||||
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2,480
In-stock
|
Diodes Incorporated | MOSFET Dual P-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 900 mOhms | - 1 V | Enhancement | |||||
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4,547
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | ||||
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2,115
In-stock
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.7 A | 125 mOhms | - 1 V | 9 nC | |||||
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1,257
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14 A | 8 mOhms | - 1 V | 72 nC | Enhancement | ||||
|
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GET PRICE |
22,850
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 19.5 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | |||
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2,576
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | +/- 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 19 mOhms | - 1 V | 29 nC | Enhancement | ||||
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1,564
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | ||||
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2,968
In-stock
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Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 65 mOhms | - 1 V | 10 nC | Enhancement | ||||
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3,950
In-stock
|
Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement | ||||
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729
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.9 A | 125 mOhms | - 1 V | 24.2 nC | Enhancement | ||||
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2,388
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 65 mOhms | - 1 V | 5 nC | Enhancement | ||||
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1,613
In-stock
|
Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement |
