- Vgs - Gate-Source Voltage :
- Package / Case :
-
- DFN1411-3 (1)
- DFN3020-8 (1)
- MSOP-8 (1)
- PowerDI3333-8 (8)
- SO-8 (5)
- SOT-23-3 (19)
- SOT-26-6 (3)
- SOT-323-3 (7)
- SOT-523-3 (4)
- SOT-563-6 (1)
- TSOT-26-6 (6)
- U-DFN2020-B-6 (1)
- U-DFN2020-E-6 (1)
- U-DFN2020-F-6 (3)
- U-DFN2523-6 (1)
- U-WLB1515-9 (1)
- X1-DFN1006-3 (1)
- X1-DFN1212-3 (2)
- X1-DFN1616-6 (1)
- X2-DFN0806-3 (2)
- X2-DFN1006-3 (4)
- X2-DFN2015-3 (1)
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- - 1.14 A (1)
- - 1.17 A (1)
- - 1.5 A (4)
- - 10 A (1)
- - 12 A (1)
- - 14 A (1)
- - 17.5 A (2)
- - 2.3 A (1)
- - 2.4 A (1)
- - 2.5 A (1)
- - 2.6 A (1)
- - 2.7 A (2)
- - 2.9 A (1)
- - 200 mA (2)
- - 3 A (4)
- - 3.2 A (1)
- - 3.3 A (1)
- - 3.4 A (1)
- - 3.5 A (2)
- - 3.6 A (1)
- - 330 mA (2)
- - 4 A (1)
- - 4.2 A (7)
- - 4.23 A (1)
- - 4.3 A (1)
- - 4.5 A (2)
- - 4.6 A (2)
- - 40 A (2)
- - 400 mA (1)
- - 42 A (2)
- - 430 mA (2)
- - 460 mA (1)
- - 6 A (1)
- - 6.2 A (1)
- - 6.5 A (2)
- - 6.6 A (1)
- - 600 mA (2)
- - 650 mA (1)
- - 7.6 A (1)
- - 700 mA (2)
- - 770 mA (1)
- - 8 A (1)
- - 820 mA (2)
- - 860 mA (1)
- - 9 A (2)
- - 9.2 A (1)
- - 900 mA (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (3)
- 1.1 Ohms (1)
- 1.5 Ohms (2)
- 100 mOhms (2)
- 110 mOhms (1)
- 12.5 mOhms (2)
- 120 mOhms (1)
- 123 mOhms (1)
- 130 mOhms (1)
- 134 mOhms (1)
- 136 mOhms (1)
- 15 Ohms (2)
- 150 mOhms (3)
- 17 mOhms (1)
- 19 mOhms (1)
- 200 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (1)
- 25 mOhms (3)
- 27 mOhms (1)
- 28 mOhms (1)
- 300 mOhms (1)
- 33 mOhms (1)
- 35 mOhms (1)
- 36 mOhms (1)
- 375 mOhms (1)
- 38 mOhms (1)
- 40 mOhms (4)
- 42.5 mOhms (1)
- 45 mOhms (2)
- 495 mOhms (2)
- 5 Ohms (1)
- 52 mOhms (1)
- 60 mOhms (1)
- 7 mOhms (2)
- 700 mOhms (2)
- 72 mOhms (1)
- 75 mOhms (3)
- 8 mOhms (2)
- 80 mOhms (4)
- 85 mOhms (1)
- 9 mOhms (2)
- 900 mOhms (3)
- 95 mOhms (2)
- 960 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 0.4 nC (1)
- 0.5 nC (1)
- 0.8 nC (1)
- 1.5 nC (4)
- 10.2 nC (3)
- 10.4 nC (2)
- 103 nC (2)
- 113 nC (1)
- 14.4 nC (3)
- 140 nC (2)
- 15.4 nC (2)
- 156 nC (1)
- 25 nC (1)
- 27 nC (1)
- 29 nC (1)
- 3.4 nC (1)
- 5.4 nC (1)
- 5.5 nC (1)
- 59 nC (2)
- 6.5 nC (1)
- 622.4 pC (2)
- 7.3 nC (1)
- 7.6 nC (1)
- 7.8 nC (1)
- 72 nC (1)
- 75 nC (1)
- 800 pC (1)
- 85 nC (1)
- 9.1 nC (2)
74 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
30,227
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | ||||
|
|
16,286
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 12 A | 17 mOhms | - 0.4 V to - 1 V | 75 nC | Enhancement | ||||
|
|
9,691
In-stock
|
Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 42.5 mOhms | Enhancement | ||||||
|
|
15,227
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A | + /- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms | - 0.7 V | 1.5 nC | Enhancement | ||||
|
|
10,285
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 72 mOhms | Enhancement | ||||||
|
|
6,624
In-stock
|
Diodes Incorporated | MOSFET P-channel 1.25W | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.6 A | 40 mOhms | Enhancement | ||||||
|
|
5,375
In-stock
|
Diodes Incorporated | MOSFET P-channel 1.25W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.6 A | 40 mOhms | Enhancement | ||||||
|
|
1,251
In-stock
|
Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 130 mOhms | Enhancement | ||||||
|
|
3,871
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | ||||
|
|
2,615
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | |||
|
|
19,640
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | ||||
|
|
6,142
In-stock
|
Diodes Incorporated | MOSFET P-Channel | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 600 mA | 900 mOhms | Enhancement | ||||||
|
|
5,765
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V VDSS Enchanced Mosfet | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | Enhancement | ||||||
|
|
4,620
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 460 mA | 1 Ohms | 622.4 pC | ||||||
|
|
8,666
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 52 mOhms | - 0.9 V | 10.2 nC | Enhancement | ||||
|
|
9,001
In-stock
|
Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 75 mOhms | Enhancement | ||||||
|
|
2,436
In-stock
|
Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 60 mOhms | Enhancement | ||||||
|
|
4,247
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 38 mOhms | - 1.4 V | 9.1 nC | Enhancement | ||||
|
|
5,340
In-stock
|
Diodes Incorporated | MOSFET P-Channel | 12 V | SMD/SMT | DFN1411-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | ||||||
|
|
870
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | ||||
|
|
2,200
In-stock
|
Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 375 mOhms | Enhancement | ||||||
|
|
5,334
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
|
|
5,588
In-stock
|
Diodes Incorporated | MOSFET P-Channel .25W | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | ||||||
|
|
4,670
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon | +/- 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 650 mA | 495 mOhms | - 700 mV | 1.5 nC | Enhancement | ||||
|
|
4,216
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | - 1 V | 622.4 pC | Enhancement | ||||
|
|
4,547
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | ||||
|
|
2,727
In-stock
|
Diodes Incorporated | MOSFET P-Channel 2.5W | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 40 mOhms | Enhancement | ||||||
|
|
3,057
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | |||
|
|
4,990
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.2 A | 75 mOhms | - 1.1 V | 14.4 nC | Enhancement | ||||
|
|
1,257
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14 A | 8 mOhms | - 1 V | 72 nC | Enhancement |
