- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,417
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.6 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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3,403
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||||
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2,634
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | |||||
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2,451
In-stock
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Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 9A | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 18 mOhms | Enhancement | ||||||
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1,563
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 18 mOhms | 2 V | 11.6 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 18 mOhms | ||||||||||
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580
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 140mOhm 12A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 800 mV | 33.7 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement |