- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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145,738
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
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63,108
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 450 mA | 1.9 Ohms | +/- 1 V | 0.4 nC, 0.5 nC | Enhancement | |||
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14,053
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.5 A | 35 mOhms, 74 mOhms | 5.7 nC, 7 nC | Enhancement | ||||
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11,069
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 1.38 A | 300 mOhms | 736.6 pC | |||||
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4,563
In-stock
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Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | ||||
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10,237
In-stock
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Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | |||||
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10,484
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT963,10K | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 450 mA | 990 mOhms | 0.5 nC | Enhancement | ||||
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7,391
In-stock
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Diodes Incorporated | MOSFET DUAL N-CHANNEL | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.5 A | 24 mOhms | 0.9 V | 8.8 nC | Enhancement | |||
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11,205
In-stock
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Diodes Incorporated | MOSFET 20V 540mA | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
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4,189
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 1.33 A | 1.5 Ohms | Enhancement | |||||
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3,765
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
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4,896
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8 A | 24 mOhms | Enhancement | |||||
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4,628
In-stock
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Diodes Incorporated | MOSFET 400mW 20V | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 670 mA | 400 mOhms | Enhancement | |||||
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893
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8.58 A | 16.5 mOhms | Enhancement | |||||
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1,209
In-stock
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Diodes Incorporated | MOSFET Complementary | 8 V | SMD/SMT | X1-DFN1612-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 750 mA | 400 mOhms | +/- 1 V | Enhancement | ||||
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5,782
In-stock
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Diodes Incorporated | MOSFET N-Channel | 10 V | SMD/SMT | X2-DFN1310-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 200 mA | 1.5 Ohms | Enhancement | |||||
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1,688
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K | 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 0.95 V | 8.8 nC | Enhancement | |||
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2,690
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K | 8 V | SMD/SMT | U-DFN3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 30 mOhms | 1.1 V | 16 nC | Enhancement | |||
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603
In-stock
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Diodes Incorporated | MOSFET Dl 20V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.7 A | 35 mOhms | Enhancement | |||||
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69
In-stock
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Diodes Incorporated | MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon | 8 V, 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 1.15 A | 5 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | |||
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20,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF | 8 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 990 mOhms | 1 V | 1 nC | Enhancement | |||
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9,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF | 12 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9 A | 13 mOhms | 0.71 V | 16 nC | Enhancement | |||
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3,000
In-stock
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Diodes Incorporated | MOSFET DUAL N-CH MOSFET 20V | U-DFN2030-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 30 mOhms | ||||||||||
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2,990
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W | 8 V | SMD/SMT | W-DFN5020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 9.6 mOhms | 1.1 V | 57.4 nC | Enhancement | |||
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995
In-stock
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Diodes Incorporated | MOSFET Dual 20V N Chl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 150 mOhms | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 30A IDM | SMD/SMT | TSSOP-8 | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 34 mOhms |
