- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,995
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 6.5 A, - 6.5 A | 45 mOhms, 45 mOhms | - 1 V, - 1 V | 10.6 nC, 16 nC | Enhancement | |||
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2,811
In-stock
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Diodes Incorporated | MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF | 20 V, 20 V | SMD/SMT | V-DFN3020-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.5 A, 5.5 A | 45 mOhms, 45 mOhms | 1 V, 1 V | 9.9 nC, 9.9 nC | Enhancement |
