- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,563
In-stock
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Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | ||||
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7,688
In-stock
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Diodes Incorporated | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement | |||
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902
In-stock
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Diodes Incorporated | MOSFET Dual 30V N Chl HDMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.3 A | 135 mOhms | 1 V | 8 nC | Enhancement | |||
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3,547
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 6 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1.34 A, - 1.14 A | 700 mOhms, 1.3 Ohms | 1 V | 736.6 pC | Enhancement | |||
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20,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF | 8 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 990 mOhms | 1 V | 1 nC | Enhancement | |||
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3,000
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | 10 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 6.9 A, 6.9 A | 25 mOhms, 25 mOhms | 1 V | 12.6 nC | Enhancement | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement |