- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,077
In-stock
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Diodes Incorporated | MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS | +/- 20 V, +/- 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.7 A, - 2.7 A | 100 mOhms, 280 mOhms | 1 V, - 3 V | 3.9 nC, 6.4 nC | Enhancement | |||
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2,483
In-stock
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Diodes Incorporated | MOSFET 40V Comp Dual ENH Low On-Resistance | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7.2 A, 5.2 A | 18 mOhms, 39 mOhms | 1 V, - 3 V | 12.9 nC, 14 nC | Enhancement | |||
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2,400
In-stock
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Diodes Incorporated | MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 5.5 A, - 5.8 A | 19 mOhms, 21 mOhms | 1 V, - 3 V | 13.2 nC, 22 nC | Enhancement | |||
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49,000
In-stock
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Diodes Incorporated | MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.3 A, 5.3 A | 24 mOhms, 80 mOhms | 1 V, - 3 V | 12.9 nC, 12.7 nC | Enhancement | |||
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2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2.4 A | 60 mOhms, 115 mOhms | 1 V, - 3 V | 11.5 nC, 8.9 nC | Enhancement |
