- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,000
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | |||
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1,248
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.3 A | 24 mOhms | Enhancement | |||||
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2,471
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | |||
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2,015
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.4 A | 24 mOhms | 1 V | 12.9 nC | Enhancement |
