- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,665
In-stock
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Diodes Incorporated | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.9 A | 80 mOhms | 1 V | 5.8 nC | Enhancement | |||
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2,424
In-stock
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Diodes Incorporated | MOSFET 60V 3.8A N-Channel MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 80 mOhms | Enhancement | |||||
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5,998
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS 31V-40 SOT26,3K | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.7 A | 80 mOhms | 7 nC | Enhancement |
