- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,615
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | ||||
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3,674
In-stock
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Diodes Incorporated | MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 150 mOhms | - 1.3 V | 12 nC | Enhancement | |||||
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2,774
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 57 mOhms | - 1.3 V | 15.9 nC | Enhancement | |||||
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GET PRICE |
282,900
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | ||||
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3,968
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, NPN | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||||
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955
In-stock
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Diodes Incorporated | MOSFET PNP/NMOS | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||||
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5,900
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 136 mOhms | - 1 V | 3.4 nC | Enhancement |