- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
8,325
In-stock
|
Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 200 mA | 5.5 Ohms | - 1.15 V | Enhancement | |||||
|
9,600
In-stock
|
Diodes Incorporated | MOSFET P-CH ENHANCEMENT MODE MOSFET | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
|
943
In-stock
|
Diodes Incorporated | MOSFET P Channel | 40 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | Enhancement | ||||||
|
611
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | ||||||
|
4,227
In-stock
|
Diodes Incorporated | MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
|
1,655
In-stock
|
Diodes Incorporated | MOSFET 200V 200mA P-Channel Enhancement MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | ||||||
|
3,350
In-stock
|
Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | |||||
|
9,905
In-stock
|
Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement | ||||
|
VIEW | Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement |