- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,400
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 40 mOhms | Enhancement | |||||
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5,891
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 30 mOhms | 1.5 V | 11.4 nC | Enhancement | |||
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1,635
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 6 A | 20 mOhms | 1.8 V | 18.6 nC | Enhancement | |||
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2,641
In-stock
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Diodes Incorporated | MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF | 12 V | SMD/SMT | X1-WLB1818-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 6 A | 27 mOhms | 1.3 V | 29 nC | Enhancement |
