- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,451
In-stock
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Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 9A | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 18 mOhms | Enhancement | |||||
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3,307
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC | 10 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9 A | 14 mOhms | 0.9 V | 21.5 nC | Enhancement | |||
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9,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF | 12 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9 A | 13 mOhms | 0.71 V | 16 nC | Enhancement |
