- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,255
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | |||
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9,581
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.4 A | 20 mOhms | 15.6 nC | |||||
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3,798
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | Enhancement | |||||
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3,797
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 20 mOhms | - 2.5 V | 35.4 nC | Enhancement | |||
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GET PRICE |
7,410
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 20 mOhms | - 1 V | 22 nC | Enhancement | ||
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1,237
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | Enhancement | |||||
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1,286
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 20 mOhms | 3 V | 19.1 nC | Enhancement | |||
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2,163
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 28 A | 20 mOhms | 1 V | 9.6 nC | Enhancement | |||
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1,635
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 6 A | 20 mOhms | 1.8 V | 18.6 nC | Enhancement | |||
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2,231
In-stock
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Diodes Incorporated | MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.8 A | 20 mOhms | 11.6 nC | Enhancement | ||||
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2,850
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 20 mOhms | 400 mV | 8.3 nC | Enhancement | |||
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2,389
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | 800 mV | 8.7 nC | Enhancement | |||
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576
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 10.5 nC | Enhancement | ||||
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24
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 6.7 A | 20 mOhms | - 1 V | 48.7 nC | Enhancement |
