- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,180
In-stock
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Diodes Incorporated | MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 15 mOhms | - 2 V | 47.5 nC | Enhancement | ||||
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4,473
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement | ||||
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4,209
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | ||||
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3,770
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 15 mOhms | 1 V | 10.5 nC | Enhancement | ||||
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1,540
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 15 mOhms | 1 V | 17 nC | Enhancement | ||||
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4,830
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 1.5 V | 47.5 nC | Enhancement | ||||
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3,930
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 DI5060-8 T&R 2.5K | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 2.5 V | 47.5 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | SMD/SMT | PowerDI3333-8 | Reel | Si | N-Channel | 30 V | 12 A | 15 mOhms | DIOFET | ||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | SMD/SMT | PowerDI3333-8 | Reel | Si | N-Channel | 30 V | 12 A | 15 mOhms | DIOFET | ||||||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | PowerDI | |||
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3,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 1810pF 37nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 15 mOhms | 37 nC | Enhancement | PowerDI | |||||||
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VIEW | Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement |
