- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,223
In-stock
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Diodes Incorporated | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 140 mOhms | 3 V | 8.6 nC | Enhancement | |||
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3,465
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 73 mOhms | 8.6 nC | Enhancement | ||||
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525
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 92 mOhms | 1 V | 8.6 nC | Enhancement | |||
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26,037
In-stock
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Diodes Incorporated | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 140 mOhms | 3 V | 8.6 nC | Enhancement |
