- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,074
In-stock
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Diodes Incorporated | MOSFET 60V UMOS H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V | 1.8 A | 300 mOhms, 425 mOhms | 1 V | 3.2 nC, 5.1 nC | Enhancement | |||
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5,108
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 1.8 A, - 1.42 A | 250 mOhms, 600 mOhms | 1 V, - 3 V | 3.2 nC, 5.1 nC | Enhancement | |||
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2,716
In-stock
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Diodes Incorporated | MOSFET 30/30V 3.1/2.3A N & P Channel | +/- 20 V, +/- 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V | 3.1 A | 180 mOhms, 330 mOhms | Enhancement | |||||
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4,528
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V | 2.72 A, 2.06 A | 180 mOhms, 330 mOhms | Enhancement | |||||
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1,945
In-stock
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Diodes Incorporated | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V | 1.1 A | 700 mOhms, 1 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | |||
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1,660
In-stock
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Diodes Incorporated | MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge | +/- 20 V, +/- 20 V | SMD/SMT | V-DFN5045-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 2.9 A, - 2.3 A | 111 mOhms, 191 mOhms | 1 V, - 3 V | 9.7 nC, 17.5 nC | Enhancement | |||
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1,076
In-stock
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Diodes Incorporated | MOSFET 60V 1.6A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 1.6 A | 300 mOhms | Enhancement | |||||
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1,549
In-stock
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Diodes Incorporated | MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6 A, - 4.2 A | 19 mOhms, 43 mOhms | 1 V, - 2 V | 11.7 nC, 11.4 nC | Enhancement | |||
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26,600
In-stock
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Diodes Incorporated | MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6 A, - 4.2 A | 40 mOhms, 80 mOhms | 1 V, - 2 V | 11.7 nC, 11.4 nC | Enhancement | |||
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91
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 1 A, - 850 mA | 700 mOhms, 1.45 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | |||
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7,500
In-stock
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Diodes Incorporated | MOSFET MOSFET H-BRIDGE SOP-8L | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 4.98 A, - 4.13 A | 33 mOhms, 80 mOhms | 1 V, - 3 V | 9 nC, 12.7 nC | Enhancement |
