- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,451
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
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13,599
In-stock
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Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | ||||||
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13,116
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 52 mOhms | 1.5 V | 11.7 nC | Enhancement | ||||
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7,829
In-stock
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Diodes Incorporated | MOSFET 0.35W 28V 1.6A | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 1.6 A | 88 mOhms | Enhancement | ||||||
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2,723
In-stock
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Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 115 mA | 2.6 Ohms | Enhancement | ||||||
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5,765
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V VDSS Enchanced Mosfet | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | Enhancement | ||||||
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4,242
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | Enhancement | ||||||
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3,475
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 140 mOhms | 1 V | 5.4 nC | Enhancement | ||||
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3,068
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | ||||
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46,798
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
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1,560
In-stock
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Diodes Incorporated | MOSFET N-Channel | 8 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||||
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51,640
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 10 Ohms | 800 mV | Enhancement | |||||
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3,970
In-stock
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Diodes Incorporated | MOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 1.2 Ohms | - 2 V | 900 pC | Enhancement | ||||
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5,588
In-stock
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Diodes Incorporated | MOSFET P-Channel .25W | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | ||||||
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4,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 2 V | 0.87 nC | Enhancement | ||||
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4,216
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | - 1 V | 622.4 pC | Enhancement | ||||
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1,240
In-stock
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Diodes Incorporated | MOSFET 250mW -20Vdss | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 400 mA | 900 mOhms | Enhancement | ||||||
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6,965
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 85 mOhms | 1.5 V | 11.7 nC | Enhancement | PowerDI | |||
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2,828
In-stock
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Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | 2 V | Enhancement | |||||
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GET PRICE |
282,900
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | |||
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2,775
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 134 mOhms | - 1 V | Enhancement | |||||
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3,014
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 340 mA | 1.2 Ohms | 500 mV | 400 pC | Enhancement | ||||
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2,080
In-stock
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Diodes Incorporated | MOSFET 2N7002 Family | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1 V | Enhancement | |||||
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1,340
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 340 mA | 1.2 Ohms | 500 mV | 500 pC | Enhancement | ||||
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5,698
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
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23,997
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 100 mOhms | Enhancement | ||||||
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41,955
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-323 | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 300 mOhms | 736.6 pC | ||||||
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16,027
In-stock
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Diodes Incorporated | MOSFET 100V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | ||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | PowerDI |
