- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.2 Ohms, 1.2 Ohms (2)
- 180 mOhms, 180 mOhms (2)
- 190 mOhms (2)
- 2.4 Ohms, 2.4 Ohms (1)
- 2.8 Ohms (1)
- 2.8 Ohms, 2.8 Ohms (1)
- 200 mOhms, 360 mOhms (2)
- 3 Ohms (2)
- 3.5 Ohms (1)
- 3.8 Ohms (2)
- 4.4 Ohms (2)
- 4.5 Ohms (2)
- 48 mOhms (1)
- 5 Ohms (2)
- 550 mOhms (1)
- 550 mOhms, 900 mOhms (1)
- 6 Ohms (2)
- 750 mOhms, 1.05 Ohms (1)
- 8 Ohms (1)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
21,269
In-stock
|
Diodes Incorporated | MOSFET 60 / -50V 200mW | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 115 mA | 4.4 Ohms | Enhancement | ||||||
|
|
17,384
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 650 mA, 450 mA | 200 mOhms, 360 mOhms | 800 mV, - 2.6 V | 1.4 nC, 1.3 nC | Enhancement | ||||
|
|
10,201
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 305 mA | 3 Ohms | Enhancement | ||||||
|
|
8,786
In-stock
|
Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | ||||||
|
|
12,981
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2 nC | Enhancement | |||||
|
|
10,237
In-stock
|
Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | ||||||
|
|
17,914
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Diodes Incorporated | MOSFET 250mW 60Vdss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | Enhancement | ||||||
|
|
8,622
In-stock
|
Diodes Incorporated | MOSFET 30V DUAL N-CH MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 260 mA | 2.8 Ohms | 1.5 V | 0.87 nC | Enhancement | ||||
|
|
9,804
In-stock
|
Diodes Incorporated | MOSFET 20V Vdss 6V VGSS Complementary Pair | 6 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1066 mA, 845 mA | 750 mOhms, 1.05 Ohms | Enhancement | ||||||
|
|
3,765
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||||
|
|
2,088
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 180 mA, 180 mA | 8 Ohms | 1 V, 1 V | 870 pC, 870 pC | Enhancement | ||||
|
|
9,245
In-stock
|
Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||||
|
|
2,480
In-stock
|
Diodes Incorporated | MOSFET Dual P-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 900 mOhms | - 1 V | Enhancement | |||||
|
|
5,720
In-stock
|
Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | ||||
|
|
9,598
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 650 mA, 450 mA | 200 mOhms, 360 mOhms | 800 mV, - 2.6 V | 1.4 nC, 1.3 nC | Enhancement | ||||
|
|
5,720
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | Enhancement | ||||||
|
|
5,865
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 350 mA, 350 mA | 1.2 Ohms, 1.2 Ohms | 500 mV, 500 mV | 400 pC, 400 pC | Enhancement | ||||
|
|
97,100
In-stock
|
Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 70 V | 115 mA | 4.4 Ohms | Enhancement | ||||||
|
|
1,542
In-stock
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | ||||
|
|
352
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 350 mA, 350 mA | 1.2 Ohms, 1.2 Ohms | 500 mV, 500 mV | 500 pC, 500 pC | Enhancement | ||||
|
|
2,790
In-stock
|
Diodes Incorporated | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 250 mA, 250 mA | 2.4 Ohms, 2.4 Ohms | 800 mV, 800 mV | 1.23 nC, 1.23 nC | Enhancement | ||||
|
|
2,755
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 220 mA, 220 mA | 2.8 Ohms, 2.8 Ohms | 800 mV, 800 mV | 870 pC, 870 pC | Enhancement | ||||
|
|
30,000
In-stock
|
Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | ||||||
|
|
9,000
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | ||||||
|
|
11,908
In-stock
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | ||||
|
|
10,000
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||||
|
|
93,000
In-stock
|
Diodes Incorporated | MOSFET PNP/NMOS | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | |||||||||
|
|
130,000
In-stock
|
Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | PowerDI | |||
|
|
VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 48 mOhms | 7 nC | Enhancement |
