- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.4 A (1)
- - 10.5 A (1)
- - 14 A (2)
- - 14.5 A (1)
- - 16.1 A (1)
- - 17 A (1)
- - 20 A (1)
- - 23.6 A (1)
- - 27 A (1)
- - 3.6 A (1)
- - 3.8 A (1)
- - 3.9 A (1)
- - 35 A (1)
- - 4.6 A (1)
- - 5.7 A (1)
- - 50 A (1)
- - 6.6 A (1)
- - 8.2 A (1)
- - 8.6 A (1)
- - 9 A (1)
- - 9.9 A (1)
- 10 A (1)
- 10.7 A (1)
- 10.9 A (1)
- 11.2 A (1)
- 12 A (1)
- 12.2 A (1)
- 13.7 A (1)
- 14.4 A (1)
- 14.5 A (1)
- 140 A (1)
- 17 A (1)
- 18 A (1)
- 18.4 A (1)
- 2.3 A (1)
- 2.6 A (1)
- 20 A (1)
- 28 A (1)
- 3.5 A (1)
- 3.7 A (1)
- 3.9 A (1)
- 37.8 A (1)
- 43 A (1)
- 5.3 A, 5 A (1)
- 50 A (2)
- 55 A (2)
- 59 A (1)
- 6 A (1)
- 6.1 A (1)
- 6.4 A (1)
- 7.7 A (1)
- 7.9 A (1)
- 70 A (2)
- 8.5 A (1)
- 9.7 A (1)
- Rds On - Drain-Source Resistance :
-
- - 70 mOhms (1)
- 1 Ohms (1)
- 10 mOhms (2)
- 10.2 mOhms (1)
- 100 mOhms (2)
- 11 mOhms (3)
- 12 mOhms (2)
- 12.1 mOhms (1)
- 120 mOhms (1)
- 125 mOhms (1)
- 130 mOhms (1)
- 14 mOhms (1)
- 140 mOhms (2)
- 16 mOhms (1)
- 160 mOhms (1)
- 18 mOhms (1)
- 190 mOhms (2)
- 2 Ohms (1)
- 2.5 mOhms (1)
- 20 mOhms (3)
- 21 mOhms (1)
- 235 mOhms (1)
- 24 mOhms (1)
- 240 mOhms (1)
- 26 mOhms (1)
- 28 mOhms (2)
- 30 mOhms (2)
- 350 mOhms (2)
- 40 mOhms (2)
- 41 mOhms (2)
- 5 mOhms (1)
- 50 mOhms (2)
- 55 mOhms (1)
- 6 mOhms (1)
- 6.5 mOhms (1)
- 60 mOhms (1)
- 65 mOhms, 65 mOhms (1)
- 650 mOhms (1)
- 68 mOhms (1)
- 69 mOhms (1)
- 750 mOhms (1)
- 8 mOhms (1)
- 80 mOhms (1)
- 85 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.3 nC (1)
- 12.1 nC (1)
- 12.9 nC (2)
- 13.9 nC (1)
- 14 nC (2)
- 14.3 nC (1)
- 16.1 nC (1)
- 16.5 nC (2)
- 17.5 nC (1)
- 18.6 nC (1)
- 18.7 nC (1)
- 18.85 nC (1)
- 22 nC (1)
- 22.4 nC (1)
- 23.2 nC (1)
- 25 nC (1)
- 25.1 nC (1)
- 25.2 nC (2)
- 26.9 nC (1)
- 29.1 nC (1)
- 29.6 nC (1)
- 33.5 nC (1)
- 33.7 nC (1)
- 34 nC (1)
- 36 nC (2)
- 41.3 nC (2)
- 44 nC (1)
- 46.9 nC (1)
- 47.5 nC (2)
- 5.4 nC (1)
- 5.8 nC (1)
- 51 nC (1)
- 59.2 nC (2)
- 6.6 nC (1)
- 8.1 nC (2)
- 8.7 nC (1)
- 9 nC (1)
- 9.2 nC (1)
- 9.6 nC (3)
- 9.7 nC (1)
- 91 nC (1)
- Applied Filters :
105 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,362
In-stock
|
Diodes Incorporated | MOSFET P-Ch 100 Volt 5.2A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.8 A | 190 mOhms | - 4 V | 26.9 nC | Enhancement | ||||
|
|
2,937
In-stock
|
Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | ||||
|
|
2,473
In-stock
|
Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | ||||
|
|
3,967
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | ||||
|
|
2,452
In-stock
|
Diodes Incorporated | MOSFET Transistor PNP 30Vceo | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 3.9 A | 1 Ohms | 2.9 V | 13.9 nC | Enhancement | PowerDI | |||
|
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3,980
In-stock
|
Diodes Incorporated | MOSFET N-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.7 A | 50 mOhms | Enhancement | ||||||
|
|
6,383
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | ||||
|
|
4,094
In-stock
|
Diodes Incorporated | MOSFET 70V P-Channel 5.7A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 5.7 A | 160 mOhms | - 1 V | 9.6 nC | Enhancement | ||||
|
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4,369
In-stock
|
Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
2,858
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 TO252,2.5K | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 14 A | 11 mOhms | 47.5 nC | Enhancement | |||||
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2,924
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 V-30V TO252 T&R 2.5K | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.5 A | 10.2 mOhms | - 2.1 V | 59.2 nC | Enhancement | ||||
|
|
4,710
In-stock
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Diodes Incorporated | MOSFET 100V N-CH MOSFET 100V 12A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 140 mOhms | 2 V | 9.7 nC | Enhancement | ||||
|
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2,889
In-stock
|
Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | ||||
|
|
3,366
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.3 A | 750 mOhms | 1.6 V | 8.1 nC | Enhancement | ||||
|
|
2,931
In-stock
|
Diodes Incorporated | MOSFET P-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.6 A | 235 mOhms | - 4 V | 16.5 nC | Enhancement | ||||
|
|
4,493
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 69 mOhms | 2 V | 25.2 nC | Enhancement | ||||
|
|
3,578
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | ||||
|
|
4,694
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | ||||
|
|
1,494
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CH 100V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 100 mOhms | Enhancement | ||||||
|
|
2,459
In-stock
|
Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | ||||
|
|
2,346
In-stock
|
Diodes Incorporated | MOSFET 70V N-Channel 6.1A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.1 A | 130 mOhms | Enhancement | ||||||
|
|
4,665
In-stock
|
Diodes Incorporated | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.9 A | 80 mOhms | 1 V | 5.8 nC | Enhancement | ||||
|
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2,490
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||
|
|
3,417
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.6 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||||
|
|
2,462
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.9 A | 350 mOhms | Enhancement | ||||||
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2,244
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 12.1 mOhms | 1 V | 34 nC | Enhancement | ||||
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3,500
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 13.7 A | 21 mOhms | 1 V | 12.9 nC | Enhancement | ||||
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|
2,237
In-stock
|
Diodes Incorporated | MOSFET 40V 10.9A N-CHANNEL MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.9 A | 50 mOhms | Enhancement | ||||||
|
|
2,431
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 12 mOhms | 1 V | 41.3 nC | Enhancement | ||||
|
|
2,154
In-stock
|
Diodes Incorporated | MOSFET 60V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 14 A | 140 mOhms | -2.7 V | 8.1 nC | Enhancement |
