- Packaging :
- Operating Temperature :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2N-CH 50V 3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 175°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2.4W | Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 50V 3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 30nC @ 10V | 290pF @ 25V |
