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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1235 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 285 | N-Channel | - | 250V | 2.2A (Ta) | 230 mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | |||
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GET PRICE |
20,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | 2.5W (Ta) |
