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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 450 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 525 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Per Unit
$2.490
RFQ
724
In-stock
Infineon Technologies MOSFET NCH 40V 130A IPAK TO-251-3 Short Leads, IPak, TO-251AA Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO251-3 0 1 N-Channel - 40V 130A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Per Unit
$2.070
RFQ
300
In-stock
Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Per Unit
$0.616
RFQ
2,000
In-stock
Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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