- Packaging :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 33A TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 800 | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 300 | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 23A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 350 | N-Channel | - | 150V | 23A (Tc) | 90 mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | 1200pF @ 25V | 10V | ±30V | 3.8W (Ta), 136W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 400 | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | 3.8W (Ta), 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 75A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | 3.1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | 3.8W (Ta), 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 33A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 23A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 150V | 23A (Tc) | 90 mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | 1200pF @ 25V | 10V | ±30V | 3.8W (Ta), 136W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | 3.8W (Ta), 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | 3.1W (Ta), 200W (Tc) |