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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 33A TO-262-3 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 800 N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 300 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 150V 23A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 350 N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V 3.8W (Ta), 136W (Tc)
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Infineon Technologies MOSFET N-CH 200V 16A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 400 N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 75A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 150V 41A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 150V 41A (Tc) 45 mOhm @ 25A, 10V 5.5V @ 250µA 110nC @ 10V 2520pF @ 25V 10V ±30V 3.1W (Ta)
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Infineon Technologies MOSFET N-CH 100V 59A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 100V 59A (Tc) 25 mOhm @ 35.4A, 10V 5.5V @ 250µA 114nC @ 10V 2450pF @ 25V 10V ±30V 3.8W (Ta), 200W (Tc)
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Infineon Technologies MOSFET N-CH 150V 33A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 150V 23A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V 3.8W (Ta), 136W (Tc)
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Infineon Technologies MOSFET N-CH 200V 16A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 200V 31A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 110nC @ 10V 2370pF @ 25V 10V ±30V 3.1W (Ta), 200W (Tc)
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